PART |
Description |
Maker |
IRG4BC10S IRG4BC10SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce(on)typ.1.10V @和VGE \u003d 15V的,集成电路\u003d 2.0安培 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
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International Rectifier, Corp.
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2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
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ON Semiconductor
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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IRG4PH30KD IRG4PH30 |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
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IRF[International Rectifier]
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TIP29D TIP29E TIP29F |
TRANS 10V 5W SA10C BIPOLAR GCI NPN SILICON POWER TRANSISTORS
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Power Innovations International, Inc. Power Innovations Limited POINN[Power Innovations Ltd]
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MAX680 MAX680C_D MAX680CPA MAX680CSA MAX680EPA MAX |
5V to 0V Voltage Converters Octal Buffers And Line Drivers With 3-State Outputs 20-CDIP -55 to 125 30 AMP MINIATURE POWER RELAY 5V to 【10V Voltage Converters 5V to 10V Voltage Converters 5V to ±10V Voltage Converters
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MAXIM - Dallas Semiconductor Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maxim Integrated Produc...
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MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
2SC506009 |
Power transistor (90 -10V, 3A)
|
Rohm
|
2SD2397 2SD1866 2SD2143 2SD2212 |
Medium Power Transistor(Motor, Relay drive) (60±10V, 2A) Medium Power Transistor(Motor, Relay drive) (60【10V, 2A)
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ROHM[Rohm]
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55GN01FA ENA1113A |
RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single SSFP
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ON Semiconductor
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GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA[Toshiba Semiconductor]
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STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
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ST Microelectronics STMicroelectronics
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